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CD4512BMS
December 1992
CMOS Dual 4-Bit Latch
Pinout
CD4512BMS TOP VIEW
D0 1 D1 2 D2 3 D3 4 D4 5 D5 6 D6 7 VSS 8 16 VDD 15 3-STATE DISABLE 14 SEL. OUTPUT 13 C 12 B 11 A 10 INHIBIT 9 D7
Features
* High-Voltage Types (20-Volt Rating) * 3-State Outputs * Standardized, Symmetrical Output Characteristics * 100% Tested for Quiescent Current at 20V * 5V, 10V, and 15V Parametric Ratings * Maximum Input Current of 1A at 18V Over Full Package Temperature Range; 100nA at 18V and 25oC * Noise Margin (Full Package-Temperature Range): - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V * Meets all Requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications for Description of `B' Series CMOS Devices"
Functional Diagram
3-STATE DISABLE INHIBIT D0-1 D1-2 D2-3 CHANNELS INPUTS D3-4 D4-5 D5-6 D6-7 D7-9 A-11 SELECT CONTROL B-12 C-13 VDD = 16 VSS = 8 14 SELECT OUTPUT 10 15
Applications
* Digital Multiplexing * Number-sequence Generation * Signal Gating
Description
CD4512BMS is an 8-channel data selector featuring a threestate output that can interface directly with, and drive, data lines of bus-oriented systems. The CD4512BMS is supplied in these 16 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4S H1E H3X
CD4512BMS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
File Number
3340
7-1180
Specifications CD4512BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case for 10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) Tri-State Output Leakage VIL VIH VIL VIH IOZL VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VIN = VDD or GND VOUT = 0V VDD = 20V VDD = 18V Tri-State Output Leakage IOZH VIN = VDD or GND VOUT = VDD VDD = 20V VDD = 18V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 3 1 2 3 1 2 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2 3 1 2 3 +25oC, LIMITS TEMPERATURE +25oC +125 C -55oC +25oC +125oC -55oC +25oC +125oC -55oC +125oC, +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC -55oC +25oC +125oC -55oC 3.5 11 -0.4 -12 -0.4 1.5 4 0.4 12 0.4 V V V V A A A A A A -55oC
o
PARAMETER Supply Current
SYMBOL IDD
CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND
MIN -100 -1000 -100 0.53 1.4 3.5 -2.8 0.7
MAX 10 1000 10 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8
UNITS A A A nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V
+25oC, +125oC, -55oC 14.95
VOH > VOL < VDD/2 VDD/2
3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.
7-1181
Specifications CD4512BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 280 378 400 540 360 486 120 162 120 162 200 270 UNITS ns ns ns ns ns ns ns ns ns ns ns ns
PARAMETER Propagation Delay Inhibit to Output Propagation Delay "A" Select to Output Propagation Delay Data to Output Propagation Delay 3-State Disable Propagation Delay 3-State Disable Transition Time
SYMBOL TPHL1 TPLH1 TPHL2 TPLH2 TPHL3 TPLH3 TPHZ TPZH TPLZ TPZL TTHL TTLH
CONDITIONS VDD = 5V, VIN = VDD or GND (Note 1, 2) VDD = 5V, VIN = VDD or GND (Note 1, 2) VDD = 5V, VIN = VDD or GND (Note 1, 2) VDD = 5V, VIN = VDD or GND (Note 2, 3) VDD = 5V, VIN = VDD or GND (Note 2, 3) VDD = 5V, VIN = VDD or GND (Note 2, 3)
+25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC
NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC,
o
MIN -
MAX 5 150 10 300 10 600 50 50 -0.36 -0.64 -1.15 -2.0
UNITS A A A A A A mV mV V V mA mA mA mA mA mA mA mA mA mA
+25oC
o
+125oC VDD = 10V, VIN = VDD or GND 1, 2 -55 C, +25 C +125 VDD = 15V, VIN = VDD or GND 1, 2
oC
4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 -
-55oC, +25oC +125oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC
Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink)
VOL VOL VOH VOH IOL5
VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V
1, 2 1, 2 1, 2 1, 2 1, 2
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
7-1182
Specifications CD4512BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Output Current (Source) SYMBOL IOH10 CONDITIONS VDD = 10V, VOUT = 9.5V NOTES 1, 2 TEMPERATURE +125oC -55 C Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC -55 Input Voltage Low Input Voltage High Propagation Delay Inhibit to Output Propagation Delay "A" Select ot Output Propagation Delay Data to Output Propagation Delay 3-State Enable Propagation Delay 3-State Enable Transition Time VIL VIH TPHL1 TPLH1 TPHL2 TPLH2 TPHL3 TPLH3 TPHZ TPZH TPLZ TPZL TTHL TTLH CIN VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V Any Input 1, 2 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 4 1, 2, 4 1, 2, 4 1, 2, 4 1, 2, 3 1, 2, 3 1, 2
oC o
MIN +7 -
MAX -0.9 -1.6 -2.4 -4.2 3 140 100 170 120 150 110 60 40 60 40 100 80 7.5
UNITS mA mA mA mA V V ns ns ns ns ns ns ns ns ns ns ns ns pF
+25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25 C +25oC +25oC +25oC +25oC +25 C +25oC +25oC +25
oC o o
+25oC +25oC +25
oC
Input Capacitance NOTES:
1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VTN VTP VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10A VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VSS = 0V, IDD = 10A VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 25 -0.2 1 2.8 1 VOL < VDD/2 1.35 x +25oC Limit UNITS A V V V V V
ns
NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25oC limit. 4. Read and Record
7-1183
Specifications CD4512BMS
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-2 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A 1.0A 20% x Pre-Test Reading 20% x Pre-Test Reading DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4
CONFORMANCE GROUPS Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K 5%, VDD = 18V 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V 0.5V OPEN 14 14 GROUND 1-13, 15 8 8, 10, 15 VDD 16 1-7, 9-13, 15, 16 16 14 1-7, 9, 11, 12 13 9V -0.5V 50kHz 25kHz
7-1184
CD4512BMS Logic Diagram
C 13 B 12 A 11
* * *
p n p n p n p n n p n 14 SELECT OUTPUT p n p n VDD p INHIBIT 10 3-STATE DISABLE 15
D0
* 1
*
*
D1 2
*
D2 3
*
D3 4
*
D4 5
*
p n p n p n VSS
D5 6
*
p n
VDD
D6 7
*
p n p n p n
D7 9
*
VSS
* All inputs protected by CMOS protection network. FIGURE 1. LOGIC DIAGRAM TRUTH TABLE SELECT CONT. A 0 1 0 1 0 1 0 1 X X B 0 0 1 1 0 0 1 1 X X C 0 0 0 0 1 1 1 1 X X INH 0 0 0 0 0 0 0 0 1 X 3-STATE DISABLE 0 0 0 0 0 0 0 0 0 1 SELECT OUTPUT D0 D1 D2 D3 D4 D5 D6 D7 0 High Z
1 = HIGH LEVEL 0 = LOW LEVEL
X = DON'T CARE
7-1185
CD4512BMS Typical Performance Characteristics
OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (fTHL, fTLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC
30 25 20 15 10 5
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
200 SUPPLY VOLTAGE (VDD) = 5V
150
100 10V 50 15V
10V
5V 0 5 10 15
0 0
20
40 60 80 100 LOAD CAPACITANCE (CL) (pF)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 2. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE
AMBIENT TEMPERATURE (TA) = +25oC
FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
0
0 -5 -10 -15 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 104
15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 7.5 5.0 2.5 10V
-10V
-20 -25
-15V 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-30
FIGURE 4. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5
FIGURE 5. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
105
8 6 4
0
0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
POWER DISSIPATION (PD) - W
AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V 10V 10V 5V
2
104
8 6 4
103
2 8 6 4 2
-10V
-10
102
-15V
-15
8 6 4 2
CL = 50pF CL = 15pF
2 4 68 2 4 68 2 4 68 2 4 68
10 10 101 103 102 INPUT FREQUENCY (fIN) (kHz)
FIGURE 6. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
FIGURE 7. TYPICAL DYNAMIC POWER DISSIPATION AS A FUNCTION OF FREQUENCY
7-1186
CD4512BMS Typical Performance Characteristics
PROPAGATION DELAY TIME (tPHL, tPLH) - ns
(Continued)
AMBIENT TEMPERATURE (TA) = +25oC 300 250 200 150 100 10V 50 5V 0 0 20 40 60 80 LOAD CAPACITANCE (CL) (pF) 100
SUPPLY VOLTAGE (VDD) = 5V
FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE ("A" SELECT TO OUTPUT)
Chip Dimensions and Pad Layouts
0 75 70 10 20 30 40 50 60 70 78
60
50
40
72-80 (1.829-2.032)
30
20
10
0 4-10 (0.102-0.254) 75-83 (1.905-2.108)
Dimensions in parentheses are in milimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch.)
METALLIZATION: PASSIVATION:
Thickness: 11kA - 14kA,
AL.
10.4kA - 15.6kA, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches
7-1187

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